Title :
Printed low temperature metal oxide thin film transistors
Author :
Chen, Zhe ; Wu, X.Z. ; Zhou, Tingzhi ; Cui, Zhigao
Author_Institution :
Printable Electron. Res. Centre, Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China
Abstract :
Thin film transistors (TFT) were constructed by inkjet printing of indium oxide semiconductor, which were annealed at the temperature of 200-300°C. Good morphology of printed indium oxide films was achieved and the printed thin film transistors exhibited acceptable performances above 250°C of annealing temperature. Furthermore, electron mobility in excess of 0.5cm2/Vs was obtained at processed temperature of 200°C through additional vacuum annealing.
Keywords :
annealing; electron mobility; indium compounds; ink jet printing; semiconductor thin films; thin film transistors; TFT; annealing temperature; electron mobility; indium oxide semiconductor; inkjet printing; printed low temperature metal oxide thin film transistors; temperature 200 degC to 300 degC; vacuum annealing; Annealing; Films; Indium; Printing; Thin film transistors; InO; Printed electronics; Solution; TFT; Transparent oxide;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
Conference_Location :
Waikiki Beach, HI
DOI :
10.1109/NEMS.2014.6908841
