• DocumentCode
    2528236
  • Title

    Improved MOCVD technology in high throughput high efficiency GaAs/Ge solar cell manufacture

  • Author

    Cheng, C.H. ; Yeh, Y.C.M. ; Chu, C.L. ; Ou, T.

  • Author_Institution
    Applied Solar Energy Corp., City of Industry, CA, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    393
  • Abstract
    GaAs/Ge (inactive germanium) solar cells (8 cm2) grown on a 0.2 mm thick Ge substrates has been space qualified and produced in a large-scale production environment (>2000 8 cm2 cells/week). AMO efficiencies over 20% have been demonstrated for areas up to 6 cm×6 cm, A detailed discussion is given on MOCVD technology improvements made in high throughput GaAs solar cell manufacture. Results showing the consistency of layer composition and quality on several different cell structures are presented
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; solar cells; vapour deposited coatings; GaAs-Ge solar cells; MOCVD technology; large-scale production environment; layer composition; semiconductor; Costs; Gallium arsenide; Inductors; MOCVD; Manufacturing; Photovoltaic cells; Production; Solar energy; Testing; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169245
  • Filename
    169245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2528236