Title :
Charging identification and compensation in the scanning electron microscope
Author :
Wong, W.K. ; Thong, J.T.L. ; Phang, J.C.H.
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Common charging artifacts in the scanning electron microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror
Keywords :
compensation; failure analysis; integrated circuit testing; photoresists; scanning electron microscopy; IC testing; beam voltage; charging artifacts; charging identification; compensation; electrostatic mirror; failure analysis; front-end control; highly-negative charging; scanning electron microscope; Electron beams; Electrostatics; Failure analysis; Insulation; Mirrors; Optical imaging; Optical microscopy; Resists; Scanning electron microscopy; Vision defects;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638151
