DocumentCode
2528259
Title
Charging identification and compensation in the scanning electron microscope
Author
Wong, W.K. ; Thong, J.T.L. ; Phang, J.C.H.
Author_Institution
Fac. of Eng., Nat. Univ. of Singapore, Singapore
fYear
1997
fDate
21-25 Jul 1997
Firstpage
97
Lastpage
102
Abstract
Common charging artifacts in the scanning electron microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror
Keywords
compensation; failure analysis; integrated circuit testing; photoresists; scanning electron microscopy; IC testing; beam voltage; charging artifacts; charging identification; compensation; electrostatic mirror; failure analysis; front-end control; highly-negative charging; scanning electron microscope; Electron beams; Electrostatics; Failure analysis; Insulation; Mirrors; Optical imaging; Optical microscopy; Resists; Scanning electron microscopy; Vision defects;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN
0-7803-3985-1
Type
conf
DOI
10.1109/IPFA.1997.638151
Filename
638151
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