DocumentCode
2528308
Title
Novel integrated thermal pressure gauge and read-out circuit by CMOS IC technology
Author
Paul, O. ; Haberli, A. ; Malcovati, P. ; Baltes, H.
Author_Institution
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
131
Lastpage
134
Abstract
We report a new type of fully CMOS-compatible thermal pressure sensors for the range from 10/sup 2/ to 10/sup 6/ Pa. The sensors are fabricated with a commercial 1.2 /spl mu/m CMOS process followed by fully CMOS-compatible post-processing, consisting of photolithography and sacrificial metal etching. The device is co-integrated with a compact driving/read-out circuit that enables operation of the sensor at constant relative temperature.<>
Keywords
CMOS integrated circuits; electric sensing devices; etching; integrated circuit technology; photolithography; pressure sensors; 1.2 micron; 1E2 to 1E6 Pa; CMOS IC technology; integrated type; photolithography; read-out circuit; sacrificial metal etching; thermal pressure gauge; Biomembranes; CMOS integrated circuits; CMOS process; CMOS technology; Etching; Heat transfer; Integrated circuit technology; Pressure gauges; Temperature sensors; Thermal sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383447
Filename
383447
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