New contact process using soft etch for stable ohmic characteristics and its application to 0.1 micron CMOS devices

Author

Sumi, H. ; Yanagida, T. ; Sugano, Y. ; Sasserath, J.N.

Author_Institution

Dept. of Device Dev., Sony Corp., Kanagawa, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

113

Lastpage

116

Abstract

A new contact process using Inductive Coupled Plasma (ICP) soft etch with Ar as an in-situ pretreatment before metallization was developed. The ICP soft etch can control metal and silicon interface conditions to form a stable ohmic contact. Evaluating ohmic characteristics, junction leakage, reliability of thin gate oxide and driving ability characteristics, this study shows that the ICP soft etch process is an effective pre-metallization treatment for contact formation in CMOS process. The mechanism to form the stable ohmic contact was theoretically analyzed by Monte-Carlo topological simulation.<>

Keywords

CMOS integrated circuits; Monte Carlo methods; integrated circuit metallisation; integrated circuit reliability; leakage currents; ohmic contacts; simulation; sputter etching; 0.1 micron; CMOS devices; IC contact process; Monte-Carlo topological simulation; Si; Ti-Si; Ti-Si interface analysis; driving ability characteristics; in-situ pretreatment; inductive coupled plasma soft etch; junction leakage; metallization; ohmic contact; premetallization treatment; reliability; stable ohmic characteristics; thin gate oxide; Analytical models; Argon; CMOS process; Etching; Metallization; Ohmic contacts; Plasma applications; Plasma properties; Plasma stability; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383451

Filename

383451