A novel high pressure low temperature aluminum plug technology for sub-0.5 /spl mu/m contact/via geometries

Author

Dixit, G.A. ; Chisholm, M.F. ; Jain, M.K. ; Weaver, T. ; Ting, L.M. ; Pearch, S. ; Mizobuchi, K. ; Havemann, R.H. ; Dobson, C.D. ; Jeffryes, A.I. ; Holverson, P.J. ; Rich, P. ; Butler, D.C. ; Hems, J.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

105

Lastpage

108

Abstract

Several recent papers have demonstrated aluminum reflow for contact/via filling in 0.5 /spl mu/m applications. However, aluminum reflow processes have not been widely accepted due to the higher deposition temperatures required and the difficulty in globally filling the high aspect ratio contacts and vias of ULSI circuits. Global filling is of particular concern for sub-0.5 /spl mu/m applications, since a viable aluminum reflow technology must be capable of achieving equivalent or better yield and reliability as compared to conventional tungsten plug technology. Yield and reliability results presented in this paper demonstrate that enhanced aluminum fill at temperatures less than 450/spl deg/C is indeed a viable process for sub-0.5 /spl mu/m applications.<>

Keywords

ULSI; VLSI; aluminium; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; 0.5 micron; 450 C; Al; IC fabrication; ULSI circuits; VLSI; high aspect ratio contacts; high pressure process; low temperature Al plug technology; reliability; subhalf micron contact via geometries; via filling; yield; Aluminum; Collimators; Filling; Integrated circuit reliability; Integrated circuit yield; Plasma applications; Plasma temperature; Plugs; Sputter etching; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383453

Filename

383453