Title :
GaAs/InxGa1−xAs/GaAs/AlAs resonant tunneling diodes for novel MEMS gyroscope application
Author :
Liu, Lishuang ; Liu, Jun ; Shi, Yunbo ; Wang, Ruirong ; Zhao, Rui ; Tang, Jun
Author_Institution :
Nat. Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan, China
Abstract :
GaAs/InxGa1-xAs/GaAs/AlAs double barrier resonant tunneling diodes (RTDs) are designed as the stress gauge element for the gyroscope application, which is based on their meso-pizeoresistive effect. The RTD with double air-bridges is fabricated using molecular beam epitaxy (MBE) and GaAs surface micromaching technology. Raman spectroscopy is used for the stress measurements. Combining the stress measurement and the RTD I-V characterization, it is concluded that the valley point in negative resistance area has the highest sensitivity reaching up to 1.03 × 10-4V/MPa. The GaAS based gyroscope is designed and fabricated. According to the test results, the angler of gyroscope measurement range of ±500°/s, that has a sensitivity of 9.35μV/°/s and linearity of 0.99259.
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; gyroscopes; indium compounds; micromachining; microsensors; molecular beam epitaxial growth; negative resistance; piezoresistive devices; resonant tunnelling diodes; GaAs-InxGa1-xAs-GaAs-AlAs; MBE; MEMS gyroscope application; RTD I-V characterization; Raman spectroscopy; double air-bridge; mesopiezoresistive effect; micromachining technology; molecular beam epitaxy; negative resistance; resonant tunneling diode; stress gauge element; stress measurement; Gallium arsenide; Laboratories; Magnetic tunneling; Metals; Micromechanical devices; Saturation magnetization; Spirals; MEMS Gyroscope; Meso-piezoresistive; RTD;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969124
