Title :
FOND (Fully Overlapped Nitride-etch defined Device): a new device architecture for high-reliability and high-performance deep submicron CMOS technology
Author :
Mieville, J.-P. ; Van den Bosch, G. ; Deferm, L. ; Bellens, R. ; Groeseneken, G. ; Maes, H.E. ; Schoenmaker, W.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
An alternative device architecture for improved hot carrier reliability which is based on the GOLD concept is proposed. The gate overlap is accurately controlled independently of the implant conditions. A comparison with LDD devices shows a large improvement in resistance against hot-carrier degradation with this new device architecture for the n- and p-MOSFET. The optimized FOND devices have the highest lifetime ever reported for a 0.35 /spl mu/m CMOS technology.<>
Keywords :
CMOS integrated circuits; hot carriers; integrated circuit reliability; integrated circuit technology; 0.35 micron; GOLD concept; deep submicron CMOS technology; fully overlapped nitride-etch defined device; gate overlap; high-performance; high-reliability; optimized FOND devices; CMOS technology; Degradation; Etching; Fabrication; Gold; Hot carriers; Implants; MOSFET circuits; Manufacturing processes; Shadow mapping;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383458
