New structure Si field emitter arrays with low operation voltage

Author

Koga, K. ; Morimoto, K. ; Hori, Y. ; Kanemaru, S. ; Itoh, J.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

23

Lastpage

26

Abstract

New structure sub micron size Si field emitter arrays (FEA\´s) with low operation voltage, and their unique fabrication technologies suitable for realizing the uniform emitter structures are proposed. Two types of FEA\´s with "tower" structure, which is close to "ideal" vertical structure, and with "cocktail glass" structure, which is an optimum disk edge type lateral structure, have been fabricated, and field emission at low gate voltage of around 10 V has been demonstrated for both structures.<>

Keywords

electron field emission; elemental semiconductors; semiconductor technology; silicon; vacuum microelectronics; 10 V; Si; Si field emitter arrays; cocktail glass structure; fabrication technologies; low operation voltage; optimum disk edge type lateral structure; submicron size; tower structure; vertical structure; Anodes; Dry etching; Electrodes; Fabrication; Field emitter arrays; Glass; Low voltage; Optical arrays; Poles and towers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383460

Filename

383460