Title :
New structure Si field emitter arrays with low operation voltage
Author :
Koga, K. ; Morimoto, K. ; Hori, Y. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
New structure sub micron size Si field emitter arrays (FEA\´s) with low operation voltage, and their unique fabrication technologies suitable for realizing the uniform emitter structures are proposed. Two types of FEA\´s with "tower" structure, which is close to "ideal" vertical structure, and with "cocktail glass" structure, which is an optimum disk edge type lateral structure, have been fabricated, and field emission at low gate voltage of around 10 V has been demonstrated for both structures.<>
Keywords :
electron field emission; elemental semiconductors; semiconductor technology; silicon; vacuum microelectronics; 10 V; Si; Si field emitter arrays; cocktail glass structure; fabrication technologies; low operation voltage; optimum disk edge type lateral structure; submicron size; tower structure; vertical structure; Anodes; Dry etching; Electrodes; Fabrication; Field emitter arrays; Glass; Low voltage; Optical arrays; Poles and towers; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383460
