Title :
Efficient system-level aging prediction
Author :
Hatami, Nadereh ; Baranowski, Rafal ; Prinetto, Paolo ; Wunderlich, Hans-Joachim
Author_Institution :
Inst. of Comput. Archit. & Comput. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
Non-functional properties (NFPs) of integrated circuits include reliability, vulnerability, power consumption or heat dissipation. Accurate NFP prediction over long periods of system operation poses a great challenge due to prohibitive simulation costs. For instance, in case of aging estimation, the existing low-level models are accurate but not efficient enough for simulation of complex designs. On the other hand, existing techniques for fast high-level simulation do not provide enough details for NFP analysis. The goal of this paper is to bridge this gap by combining the accuracy of low-level models with high-level simulation speed. We introduce an efficient mixed-level NFP prediction methodology that considers both the structure and application of a system. The system is modeled at transaction-level to enable high simulation speed. To maintain accuracy, NFP assessment for cores under analysis is conducted at gate-level by cycle-accurate simulation. We propose effective techniques for cross-level synchronization and idle simulation speed-up. As an example, we apply the technique to analyze aging caused by Negative Bias Temperature Instability in order to identify reliability hot spots. As case studies, several applications on an SoC platform are analyzed. Compared to conventional approaches, the proposed method is from 7 up to 400 times faster with mean error below 0.006%.
Keywords :
CMOS integrated circuits; MOS integrated circuits; ageing; circuit analysis computing; circuit reliability; circuit simulation; fault simulation; integrated circuit reliability; SoC platform; cross-level synchronization; cycle-accurate simulation; effective technique; efficient mixed-level NFP prediction methodology; efficient system-level aging prediction; high-level simulation speed; idle simulation speed-up; low-level model; negative bias temperature instability; reliability hot spot; Aging; Analytical models; Logic gates; Stress; Time domain analysis; Time varying systems; Transistors; Negative Bias Temperature Instability (NBTI); Non-functional properties; Transaction Level Modeling (TLM); aging analysis; mixed-level simulation;
Conference_Titel :
Test Symposium (ETS), 2012 17th IEEE European
Conference_Location :
Annecy
Print_ISBN :
978-1-4673-0696-6
Electronic_ISBN :
978-1-4673-0695-9
DOI :
10.1109/ETS.2012.6233028