Title :
Coupling-based resistive-open defects in TAS-MRAM architectures
Author :
Azevedo, J. ; Virazel, A. ; Bosio, A. ; Dilillo, L. ; Girard, P. ; Todri, A. ; Prenat, G. ; Alvarez-Herault, J. ; Mackay, K.
Author_Institution :
LIRMM, Univ. Montpellier 2, Montpellier, France
Abstract :
Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.
Keywords :
MRAM devices; TAS-MRAM architectures; coupling-based resistive-open defects; double cell faulty behaviors; nonvolatile memory technologies; thermally assisted switching magnetic random access memory architectures; Computer architecture; Couplings; Decoding; Logic gates; Magnetic tunneling; Switches; Transistors; TAS-MRAM; fault modeling; non-volatile memories; resistive-open defects; spintronics; test;
Conference_Titel :
Test Symposium (ETS), 2012 17th IEEE European
Conference_Location :
Annecy
Print_ISBN :
978-1-4673-0696-6
Electronic_ISBN :
978-1-4673-0695-9
DOI :
10.1109/ETS.2012.6233034
