• DocumentCode
    2529173
  • Title

    RF sputtered (LaNa)0.5Bi2Nb2O9 dielectric thins films

  • Author

    Wei, Ren ; Zhongyan, Meng ; Shuyin, Tian ; Xi Yao

  • Author_Institution
    Dept. of Electron. Eng., Xi´´an Jiatong Univ., China
  • fYear
    1988
  • fDate
    12-16 Sep 1988
  • Firstpage
    136
  • Abstract
    The preparation, characterization, and dielectric properties of RF-sputtered bismuth layer-type oxide (LaNa)0.5Bi2Nb2O9 (LNBN) thin films were investigated. It was found that the preparation parameters which most influenced the structure and dielectric properties of the films were sputtering voltage and postannealing temperature. The as-sputtered film was amorphous in nature, but the film annealed around 700°C in air has a pure bismuth layer-type structure. LNBN films with ε=70, tan δ<4×10-3 (25°C, 100 kHz), ρ >6×1012 Ω-cm, and Eb >1.8 MV/cm were prepared reproducibly. It is predicted that this material has potential for use in dielectric devices
  • Keywords
    dielectric thin films; lanthanum compounds; sodium compounds; sputtered coatings; (LaNa)0.5Bi2Nb2O9; 6E12 ohmcm; 700 C; RF sputtered films; characterization; dielectric properties; dielectric thins films; postannealing temperature; preparation; sputtering voltage; structure; Amorphous materials; Annealing; Bismuth; Dielectric materials; Dielectric thin films; Niobium; Radio frequency; Sputtering; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
  • Conference_Location
    Beijing
  • Type

    conf

  • DOI
    10.1109/ICPADM.1988.38352
  • Filename
    38352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2529173