Title :
Power QFN down bond lift and delamination study
Author :
Hanmin Zhang ; Hu, M. ; Wang, S. ; Ilko, S. ; Yin, B.G. ; He, Q.C. ; Ye, D.H.
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
The PQFN device revealed down bond lift and delamination issues. Based on AES (Auger Electron Spectroscopy), XPS (X-ray Photoelectron Spectroscopy) and FTIR (Fourier Transform Infrared Spectroscopy) analysis it was possible to verify that a down bond contamination caused the failure. Cross sections of down bond wire for the failed unit showed a broken heel on the down bond. Furthermore, cracking between molding compound and lead frame was found. It was proven that the delamination caused the down bond lift and the broken heel. FEA (Finite Element Analysis) revealed that the delamination can lead to shear stress increase at the down bond heel.
Keywords :
Auger electron spectra; Fourier transform infrared spectra; X-ray photoelectron spectra; contamination; cracks; delamination; finite element analysis; integrated circuit bonding; integrated circuit packaging; Auger electron spectroscopy; FTIR; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; bond contamination; cracking; delamination; finite element analysis; power QFN down bond lift; power quad flat no-lead package; shear stress; Bonding; Compounds; Contamination; Delamination; Lead; Stress; Wires; Contamination; Delamination; Down bond lift; FEA modeling; PQFN package;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location :
Singapore
DOI :
10.1109/EPTC.2014.7028424
