DocumentCode
2529423
Title
Tunable band pass Gm-C filter with switched transconductance cells
Author
Ramasamy, S. ; Venkataramani, B. ; Stalin, S.M. ; Venkatachalam, K.
Author_Institution
Dept. of ECE, NIT, Trichy
fYear
2008
fDate
19-21 Nov. 2008
Firstpage
1
Lastpage
5
Abstract
In this paper, a technique for realizing a widely tunable band pass Gm- C filter is proposed by using output switched transconductance cells. This is suitable for low voltage applications. The proposed technique is applied to the design of a programmable second-order band pass Gm-C continuous-time filter with a center frequency, tunable from 10 to 120 MHz and is implemented in TSMC 0.18 mum CMOS process. To verify its effectiveness, the proposed filter and a filter using an alternative architecture reported in the literature, are implemented and their performances are compared. Gm/Id design methodology is followed in designing the transconductor block. From the design and post layout simulation results, it is observed that the filter implemented using output switched transconductance approach results in lesser total harmonic distortion (THD) and supports larger signal swing compared to the alternative approach at the cost of marginal increase in power dissipation. The proposed approach guarantees the upper bound on THD to be -40 dB for a signal swing of 225 mVpp.
Keywords
CMOS integrated circuits; band-pass filters; harmonic distortion; integrated circuit layout; low-power electronics; programmable filters; Gm/Id design methodology; TSMC CMOS process; alternative architecture; frequency 10 MHz to 120 MHz; low voltage applications; output switched transconductance cells; post layout simulation results; power dissipation; programmable second-order band pass Gm-C continuous-time filter; size 0.18 mum; total harmonic distortion; transconductor block; tunable band pass Gm-C filter; voltage 225 mV; Band pass filters; CMOS process; Design methodology; Frequency; Low voltage; Power harmonic filters; Signal design; Total harmonic distortion; Transconductance; Transconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2008 - 2008 IEEE Region 10 Conference
Conference_Location
Hyderabad
Print_ISBN
978-1-4244-2408-5
Electronic_ISBN
978-1-4244-2409-2
Type
conf
DOI
10.1109/TENCON.2008.4766669
Filename
4766669
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