Title :
A CMOS compatible polycrystalline silicon-germanium based piezoresistive pressure sensor
Author :
Gonzalez, P. ; Guo, B. ; Severi, S. ; De Meyer, K. ; Witvrouw, A.
Author_Institution :
Interuniversity Electron. Center (IMEC), Leuven, Belgium
Abstract :
This paper presents for the first time a piezoresistive poly-SiGe pressure sensor processed at temperatures compatible with above-CMOS integration. Despite the low processing temperature (max. 455°C), a sensitivity of 5.8mV/V/bar for a membrane of 200×200 μm2 is reached by piezoresistor design optimization. The possibility of further enhancing the piezoresistive properties of SiGe by tuning annealing time is investigated, leading to a 30% improvement in gauge factor.
Keywords :
CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; piezoresistive devices; pressure sensors; semiconductor growth; CMOS compatible polycrystalline silicon-germanium sensor; Si-Ge; gauge factor; piezoresistive pressure sensor; piezoresistor design optimization; Annealing; Micromechanical devices; Piezoresistance; Sensitivity; Silicon germanium; Temperature sensors; Poly-SiGe; piezoresistivity; pressure sensor;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969178
