Title :
Performance of coherent MFSK schemes over slow flat fading channels
Author :
Chandra, Aniruddha ; Poram, Srinivasa Rao ; Bose, Chayanika
Author_Institution :
E.C.E. Dept., N.I.T. Durgapur, Durgapur
Abstract :
Analytical solutions for the average symbol error rate of coherent M-ary frequency shift keying (MFSK) modulation schemes operating over frequency non-selective slow fading channels corrupted by additive white Gaussian noise (AWGN) are derived. Starting from the alternate expressions for integer powers (n < 5) of Gaussian Q function, the symbol error probabilities (SEP) are obtained using probability density function (pdf) based approach. The derived end expressions composed of finite range integrals can be numerically computed and gives either exact values or provide tighter lower bounds. Different small scale fading statistics such as Rayleigh, Rician (Nakagami-n), Hoyt (Nakagami-q), and Nakagami-m has been considered for channel modelling. Error probabilities are graphically displayed for each model with different values of modulation order M and also for corresponding fading parameters (K, q, and m). The theoretical results presented offers insight to assess the efficacy of relatively less studied coherent MFSK in context of the optimum modulation choice in wireless communication.
Keywords :
AWGN channels; Nakagami channels; Rayleigh channels; Rician channels; fading channels; frequency shift keying; radiocommunication; AWGN; Hoyt; M-ary frequency shift keying modulation; MFSK schemes; Nakagami-m; Nakagami-n; Nakagami-q; Rayleigh; Rician; additive white Gaussian noise; analytical solutions; fading channels; probability density function; symbol error probabilities; symbol error rate; wireless communication; AWGN; Additive white noise; Error analysis; Error probability; Fading; Frequency shift keying; Integral equations; Probability density function; Rayleigh channels; Statistics; Hoyt; MFSK; Nakagami-m; Q function; Rayleigh; Rician;
Conference_Titel :
TENCON 2008 - 2008 IEEE Region 10 Conference
Conference_Location :
Hyderabad
Print_ISBN :
978-1-4244-2408-5
Electronic_ISBN :
978-1-4244-2409-2
DOI :
10.1109/TENCON.2008.4766678