Title :
Poly-Ge near-infrared photodetectors for silicon based optoelectronics
Author :
Masini, Gianlorenzo ; Colace, Lorenzo ; Assanto, Gaetano
Author_Institution :
Nonlinear Opt. & Optoelectronics Lab., Univ. ´´Roma Tre´´, Roma, Italy
fDate :
29 June-3 July 2003
Abstract :
In this paper we review the recent achievements of germanium on silicon technologies for the fabrication of near infrared photodetectors.
Keywords :
chemical mechanical polishing; elemental semiconductors; germanium; infrared detectors; photodetectors; semiconductor heterojunctions; silicon; vacuum deposition; CMP; Ge; Si; carbon incorporation; critical thickness; dark current density; fabrication; germanium on silicon technologies; graded buffers; heterojunction detectors; lattice mismatch; near infrared photodetectors; polycrystalline germanium; responsivity; seamless integration; silicon based optoelectronics; strained superlattices; surface morphology; Absorption; Germanium alloys; Germanium silicon alloys; Infrared detectors; Lattices; Optical fiber communication; Optical fiber networks; Photodetectors; Semiconductor films; Silicon germanium;
Conference_Titel :
Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on
Print_ISBN :
0-7803-7816-4
DOI :
10.1109/ICTON.2003.1263184
