Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology

Author

Dobashi, Kazuo ; Inai, Kohei ; Saito, Masato ; Seki, Takaya ; Aoki, Toyohiro ; Matsuo, Jiro

Author_Institution

Tokyo Electron Ltd., Yamanashi, Japan

Volume

26

Issue

3

fYear

2013

fDate

Aug. 2013

Firstpage

328

Lastpage

334

Abstract

In this paper, the ultrafine particle removal using CO₂ gas cluster ion beam (GCIB) technology is investigated. The CO₂ GCIB is irradiated the sample at an angle of 0 ^° with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO₂ GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation.

Keywords

carbon compounds; elemental semiconductors; ion beam applications; molecular dynamics method; silicon; surface cleaning; CO₂; gas cluster ion beam technology; molecular dynamics simulation; particle removal efficiency; particle removal uniformity; pattern damage; size 12 nm; size 45 nm; space pattern particles; ultrafine particle removal; Damage-free cleaning; gas cluster beam technology; physical cleaning; ultrafine particle removal;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2013.2268871

Filename

6542736