A new self-aligned field oxide cell for multimegabit EPROMs

A novel EPROM (electrically programmable ROM) cell, suitable for production of very-high-density multimegabit memories, is described. The structure is a contactless crosspoint cell whose floating gate is self-aligned to word lines and bit lines. Strong reduction of cell area and contact number is achieved with respect to the conventional cell. Electrical characteristics and reliability behavior of this structure have been studied and are reported together with the fabrication process. It is noted that performances and scalability make this cell interesting for future multimegabit EPROM developments.<>