The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

Author

Oiler, J. ; Qiu, X. ; Zhu, J. ; Tang, R. ; Chen, S.J. ; Huang, H. ; Holbert, K. ; Barnaby, H. ; Yu, H.

Author_Institution

Arizona State Univ., Tempe, AZ, USA

fYear

2011

fDate

5-9 June 2011

Firstpage

2058

Lastpage

2061

Abstract

This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.

Keywords

II-VI semiconductors; acoustic resonators; bulk acoustic wave devices; particle detectors; plasma CVD; silicon compounds; wide band gap semiconductors; zinc compounds; FBAR; PECVD; SiN; ZnO; film bulk acoustic-wave resonator; ionizing radiation sensor; parallel resonant frequency; plasma enhanced chemical vapor deposited; radiation sensitivity; radiation-induced charge trapping; sensitivity enhancement; Film bulk acoustic resonators; Films; Resonant frequency; Sensitivity; Silicon; Silicon compounds; Zinc oxide; FBAR; dosimeter; ionizing radiation; resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969221

Filename

5969221