• DocumentCode
    2530278
  • Title

    Aluminum nitride pMUT based on a flexurally-suspended membrane

  • Author

    Guedes, A. ; Shelton, S. ; Przybyla, R. ; Izyumin, I. ; Boser, B. ; Horsley, D.A.

  • Author_Institution
    Berkeley Sensor & Actuator Center, Univ. of California, Davis, CA, USA
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    2062
  • Lastpage
    2065
  • Abstract
    Piezoelectric micro-machined ultrasonic transducers (pMUTs) for air-coupled ultrasound applications were fabricated using aluminum nitride (AlN) as the active piezoelectric material. Earlier pMUTs based on a fully clamped membrane design suffer from high sensitivity to residual stress, causing large variations in the operating frequency, and have a reduced dynamic range due to nonlinearity at large drive voltages. Here we evaluate a new design based on a membrane that is supported by three flexures and a thin oxide layer, aimed to release residual stress, extend the mechanical dynamic range and improve the acoustic coupling. The acoustic performance of this flexurally suspended design is compared with a fully clamped one, showing a piston-like mode shape, which translates to improved output sound pressure.
  • Keywords
    III-V semiconductors; acoustic couplers; aluminium compounds; bending; clamps; internal stresses; membranes; micromachining; microsensors; piezoelectric materials; piezoelectric transducers; ultrasonic transducers; wide band gap semiconductors; AlN; acoustic coupling; air-coupled ultrasound application; flexurally-suspended membrane; fully clamped membrane design; mechanical dynamic range; pMUT; piezoelectric material; piezoelectric micromachined ultrasonic transducer; piston-like mode shape; residual stress; thin oxide layer; Acoustics; Aluminum nitride; Drives; Electrodes; Fabrication; Microphones; Ultrasonic transducers; Aluminum nitride; piezoelectric MEMS; ultrasound transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
  • Conference_Location
    Beijing
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0157-3
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2011.5969223
  • Filename
    5969223