Title :
0.6 mu m EPROM cell design based on a new scaling scenario
Author :
Yoshikawa, K. ; Mori, S. ; Kaneko, Y. ; Ohshima, Y. ; Arai, N. ; Sakagami, E.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel scaling guideline is proposed for further scaling of EPROM (electrically programmable ROM) cells. Lateral and vertical scaling factors are independently introduced to clarify the scaling effects on cell reliabilities and performances. Based on the proposed scaling scenario, device dimensions and operation voltage designs for 16-Mb EPROM cells are given. 0.6- mu m EPROM cells have been fabricated and the validity of the guideline has been experimentally confirmed.<>
Keywords :
EPROM; MOS integrated circuits; integrated memory circuits; 0.6 micron; 16 Mbit; EPROM cell design; cell reliabilities; electrically programmable ROM; operation voltage designs; scaling guideline; vertical scaling factors; EPROM; Electrons; Laboratories; Magnetooptic recording; Microelectronics; Reliability engineering; Semiconductor devices; Stress; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74349
