DocumentCode :
2530837
Title :
Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region
Author :
Papadopoulos, N.P. ; Hatzopoulos, A.A. ; Papakostas, D.K. ; Dimitriadis, C.A. ; Siskos, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki
fYear :
2006
fDate :
21-24 May 2006
Lastpage :
432
Abstract :
The influence of the light illumination on the drain current of polycrystalline silicon thin-film transistors is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds and Vgs values. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region
Keywords :
carrier mobility; elemental semiconductors; light; silicon; thin film transistors; light illumination; light impact; output current; polycrystalline silicon thin-film transistors; sub-threshold region; Current measurement; Educational technology; Grain boundaries; Lighting; Phase measurement; Physics computing; Silicon; Thickness measurement; Thin film transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
Type :
conf
DOI :
10.1109/ISCAS.2006.1692614
Filename :
1692614
Link To Document :
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