• DocumentCode
    2530837
  • Title

    Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region

  • Author

    Papadopoulos, N.P. ; Hatzopoulos, A.A. ; Papakostas, D.K. ; Dimitriadis, C.A. ; Siskos, S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki
  • fYear
    2006
  • fDate
    21-24 May 2006
  • Lastpage
    432
  • Abstract
    The influence of the light illumination on the drain current of polycrystalline silicon thin-film transistors is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds and Vgs values. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region
  • Keywords
    carrier mobility; elemental semiconductors; light; silicon; thin film transistors; light illumination; light impact; output current; polycrystalline silicon thin-film transistors; sub-threshold region; Current measurement; Educational technology; Grain boundaries; Lighting; Phase measurement; Physics computing; Silicon; Thickness measurement; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
  • Conference_Location
    Island of Kos
  • Print_ISBN
    0-7803-9389-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2006.1692614
  • Filename
    1692614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2530837