Direct BSIM3v3 parameter extraction for hot-carrier reliability simulation of N-channel LDD MOSFETs

A novel direct parameter extraction strategy for the BSIM3v3 MOSFET model, and its application to hot-carrier reliability simulation, is presented in this paper. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The extraction routines presented are based on the device equations of BSIM3vS, and the use of a direct scheme over an optimised scheme makes the extraction routines repeatable over a wide range of experimental conditions. The more common commercial reliability simulators available in the industrial market generate predicted parameter sets after selected durations of device operation by interpolation (or extrapolation) between measured parameter sets extracted at intervals, during a constant-bias stress. The work presented here suggests that confidence in the predicted circuit performance is dependent on very careful choice of both the parameter sets supplied to the reliability simulator, and the applied stressing conditions