Performance enhancementof SOI power LDMOSFET using trench gate technology

In this paper, we propose that the performance of a conventional power metal-oxide-semiconductor field effect transistor (LDMOSFET) on SOI can be improved by placing a gate in the trench built in the drift region to enhance the current conduction and reduced-surface electric field (RESURF)effect. The RESURF effect can be further improved by using an additional trench in the drift region filled with oxide. Using 2-dimensional numerical simulations, the performance of the proposed device is evaluated and compared with the conventional power MOSFET on SOI. The simulation results show that abetter trade-off between breakdown voltage and ON-resistance can be obtained using proposed structure. The figure-of-merit(FOM) of the proposed device is 3 times better than the conventional power LDMOSFET on SOI for the same cell pitch.