Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure

Author

Jie, B.B. ; Li, M.-F. ; Lou, C.L. ; Lo, K.F. ; Chim, W.K. ; Chan, D.S.H.

Author_Institution

Centre for IC Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

176

Lastpage

181

Abstract

A direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well in p-substrate is demonstrated. The interface trap densities are monitored using the bulk current of the MOS transistor. The DCIV results for pMOSFETs after substrate hot carrier injection and channel hot carrier injection are presented and analyzed. There are two peaks in the DCIV spectrum after channel hot carrier injection, corresponding to hot-carrier-generated interface traps located in the channel region and the lightly-doped drain (LDD) region respectively. The stress-induced oxide charge results in the shifts of two peaks

Keywords

MOSFET; electron traps; hot carriers; semiconductor device reliability; LDD pMOSFETs; bulk current; channel hot carrier injection; channel region; direct-current current-voltage technique; direct-current measurements; hot-carrier-generated interface traps; interface trap densities; interface traps; n-well in p-substrate; n-well structure; stress-induced oxide charge; substrate hot carrier injection; Current measurement; Degradation; Electron traps; Failure analysis; Hot carrier injection; Hot carriers; MOSFETs; Radiative recombination; Semiconductor device manufacture; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638193

Filename

638193