DocumentCode :
2531343
Title :
Parallel-Resonant Inverter with Two Current Sources: Analysis and design methodology
Author :
Ponce-Silva, Mario ; Bautista, Jose L. ; Tapia, Alejandro ; Nicolas, Caren I. ; Granados, Teresa R. ; Araujo, Ismael
fYear :
2010
fDate :
22-25 Aug. 2010
Firstpage :
156
Lastpage :
160
Abstract :
The steady state analysis and design methodology of the Parallel-Resonant Inverter with Two Current Sources is presented in this paper. The analyzed circuit is the dual of the half bridge series resonant voltage source inverter and based in the principle of duality, a very simple design methodology for resonance condition is developed. An example design with the following specifications was simulated and implemented: Power 100 W, frequency 150 kHz, and feeding voltage 180 V. The results validate the design methodology and indicate that the best choice for the switches is the IGBT instead of an array of a MOSFET in series with a diode.
Keywords :
constant current sources; network analysis; power semiconductor switches; resonant invertors; IGBT switches; current source; frequency 150 kHz; half bridge series; parallel-resonant inverter; power 100 W; resonant voltage source inverter; steady state analysis; voltage 180 V; Bridge circuits; Design methodology; Inductors; Insulated gate bipolar transistors; Integrated circuit modeling; Inverters; Topology; Circuit analysis; DC-AC power conversion; Insulated gate bipolar transistors; Resonant power conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Congress (CIEP), 2010 12th International
Conference_Location :
San Luis Potosi
Print_ISBN :
978-1-4244-8066-1
Type :
conf
DOI :
10.1109/CIEP.2010.5598849
Filename :
5598849
Link To Document :
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