DocumentCode
2531403
Title
Efficient spin injection using tunnel injectors
Author
Jiang, X.
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
fYear
2005
fDate
24-27 July 2005
Firstpage
8
Abstract
Summary form only given, as follows. Semiconductor spintronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence from a quantum well light emitting diode structure. The temperature and bias dependence of the electroluminescence polarization provides insight into the spin relaxation mechanisms within the semiconductor heterostructure.
Keywords
electroluminescence; light emitting diodes; magnetoelectronics; semiconductor heterojunctions; semiconductor quantum wells; spin polarised transport; circular polarization; electrical spin injection; electroluminescence; logic devices; memory devices; quantum well light emitting diode structure; semiconducting materials; semiconductor heterostructure; semiconductor spintronics; sensor; spin polarization; spin relaxation mechanisms; spin states; tunnel injectors; Current measurement; Electroluminescence; Electron emission; Logic devices; Magnetoelectronics; Optical polarization; Semiconductivity; Semiconductor materials; Spin polarized transport; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
MEMS, NANO and Smart Systems, 2005. Proceedings. 2005 International Conference on
Conference_Location
Banff, Alta., Canada
Print_ISBN
0-7695-2398-6
Type
conf
DOI
10.1109/ICMENS.2005.46
Filename
1540757
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