Dislocation multiplication inside contact holes

Author

Hsieh, Yong-Fen ; Hwang, Yang-Chu ; Fu, Jui-Mei ; Peng, Yuan-Ching ; Chen, Lih-Juann

Author_Institution

United Microelectron. Corp., Hsinchu, Taiwan

fYear

1997

fDate

21-25 Jul 1997

Firstpage

202

Lastpage

206

Abstract

Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes (<0.5 um) with high aspect ratio (a/c>4), which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 um after back-end processings. Those dislocations were identified to be Schockley partials dislocations and stair rod dislocations lying on 4 sets of inclined (111)Si planes

Keywords

contact resistance; dislocation multiplication; ion implantation; masks; metallisation; 0.5 micron; Schockley partial dislocation; Si; Si substrate; aspect ratio; back-end processing; contact hole; contact resistance; dislocation multiplication; ion implantation doping; mask edge defect; stair rod dislocation; Amorphous materials; Contact resistance; Crystallization; Degradation; Implants; Ion implantation; Materials science and technology; Microelectronics; Rapid thermal annealing; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638203

Filename

638203