Title :
Analytical Modeling of the Surface Potential of Triple Material Symmetrical Gate Stack Double Gate (TMGS-DG) MOSFET
Author :
Singh, Navab ; Tripathi, Shivendra
Author_Institution :
Dept. of Electron. & Commun. Eng, Motilal Nehru Nat. Inst. of Technol., Allahabad, India
Abstract :
This paper presents two dimensional (2D) analytical Modeling of the Surface Potential of Triple Material Symmetric Gate Stack Double Gate (TMGS-DG) MOSFET. The model has been derived by solving 2D Poisson´s equation in conjunction with suitable boundary conditions. The effect of high-k layer thickness on the potential barrier has been analyzed. The results obtained from the developed model have been compared with the numerical simulation results obtained using ATLAS™ device simulator.
Keywords :
MOSFET; Poisson equation; semiconductor device models; surface potential; 2D Poisson equation; 2D analytical modeling; ATLAS™ device simulator; TMGS-DG MOSFET; high-k layer thickness; surface potential; triple material symmetrical gate stack double gate MOSFET; Logic gates; MOSFET circuits; Nanotechnology; Semiconductor device modeling; Silicon; Double gate MOSFET; gate Engineering; parabolic approximation method;
Conference_Titel :
Recent Advances and Innovations in Engineering (ICRAIE), 2014
Conference_Location :
Jaipur
Print_ISBN :
978-1-4799-4041-7
DOI :
10.1109/ICRAIE.2014.6909215
