DocumentCode
2531670
Title
Investigation for lateral diecrack on SIP power device
Author
Premachandran, C.S. ; Palmeda, Elvira M. ; Chai, T.C.
Author_Institution
Delco Electron., Singapore
fYear
1997
fDate
21-25 Jul 1997
Firstpage
219
Lastpage
223
Abstract
SIP packages were found to be susceptible to lateral die crack during assembly process. An investigation into the lateral die crack has led to better understanding of the possible failure mechanism and solutions for improvement have been found. In this study both experimental and FEA simulation were carried out. The simulated results can correlate well with experimental observation. Based on this work the design methodology for the SIP package have been improved. It is possible to build SIP packages with better resistant to lateral die crack and hence further enhance its quality and reliability
Keywords
assembling; cracks; failure analysis; finite element analysis; integrated circuit packaging; power integrated circuits; FEA simulation; SIP package; assembly; design methodology; failure; lateral die crack; power device; reliability; Assembly; Delamination; Electric shock; Failure analysis; Materials testing; Packaging; Performance analysis; Scanning electron microscopy; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN
0-7803-3985-1
Type
conf
DOI
10.1109/IPFA.1997.638211
Filename
638211
Link To Document