Title :
Measurement of the loss tangent of single crystals of CaF2 and of LiF with a new highly sensitive loss tangent bridge
Author :
Kwaaitaal, Th. ; van der Eijnden, W.M.M.M.
Author_Institution :
Eindhoven Univ. of Technol., Netherlands
Abstract :
The loss tangents of single crystals of CaF2 and of LiF were measured in the temperature range between 80 and 350 K in the audio frequency range. The lowest values of about 5×10-6 were found at low temperature and low frequencies. These values are not measurable with standard instrumentation. In view of this a special highly sensitive ratio-transformer bridge with a sensitivity of 1×10-8 for the loss tangent of capacitances of a few to several hundred picofarads was developed. The frequency range of the instrument is 700-15000 Hz but can be extended to 200 kHz. The high-temperature response of the two solids can be described by a relaxation effect with an activation energy of 1.40 eV for CaF2 and of 0.60 eV for LiF. At low temperatures the response is almost independent of frequency. At higher frequencies the temperature dependence of the loss tangent disappears and extrapolation of the measurements to higher frequencies shows a tendency to a loss tangent that is almost independent of temperature and frequency
Keywords :
bridge instruments; calcium compounds; dielectric loss measurement; dielectric losses; dielectric properties of solids; lithium compounds; 700 to 15000 Hz; 80 to 350 K; CaF2; LiF; activation energy; audio frequency range; frequency range; high-temperature response; loss tangent bridge; loss tangent measurement; ratio-transformer bridge; relaxation effect; temperature dependence; Bridges; Crystals; Frequency measurement; Instruments; Loss measurement; Measurement standards; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
Conference_Location :
Beijing
DOI :
10.1109/ICPADM.1988.38372