Highly thermal robust Ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application

Author

Yun, Jang-Gn ; Oh, Soon-Young ; Ji, Hee-Hwan ; Huang, Bin-Feng ; Park, Seong-Hyung ; Lee, Heui-Seung ; Kim, Dae-Byung ; Kim, Ui-Sik ; Cha, Han-Seob ; Hu, Sang-Bum ; Lee, Jeong-Gun ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

26

Lastpage

28

Abstract

Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The sheet resistance was degraded as the Ge concentration increases in Si_1-xGe_x. Low temperature silicidation and wide range of RTP process window are achieved as well as the improvement of the thermal stability according to different dopant types by the subsequent Co and TiN capping layer above NiPt on Si_1-xGe_x.

Keywords

Ge-Si alloys; MOSFET; X-ray photoelectron spectra; cobalt; multilayers; nanoelectronics; nickel alloys; nickel compounds; platinum alloys; rapid thermal annealing; semiconductor materials; thermal stability; titanium compounds; CMOS application; Co capping layer; Ge concentration; NiGeSi-NiPt-Co-TiN; NiPt-Co-TiN trilayer; RTP process; TiN capping layer; drain dopant; low temperature silicidation; nanoscale CMOSFET application; sheet resistance; source dopant; thermal robust Ni-germanosilicide; thermal stability; Annealing; CMOS technology; Germanium silicon alloys; Robustness; Silicidation; Silicon germanium; Temperature; Thermal stability; Tin; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392238

Filename

1392238