DocumentCode :
2531808
Title :
Design Analysis of a 12.5 GHz PLL in 130 Nm SiGe BiCMOS Process
Author :
Kehan Zhu ; Saxena, Vishal ; Xinyu Wu ; Balagopal, Sakkarapani
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA
fYear :
2015
fDate :
20-20 March 2015
Firstpage :
1
Lastpage :
4
Abstract :
A systematic design method is applied to study and analyze the loop stability and phase noise of a type-II 3rd-order charge pump PLL. The designed PLL outputs at 12.5 GHz, which is intended to provide a clock for a silicon photonic transmitter prototype. The charge pump current and loop filter resistor are made tunable to cover process and temperature variations. The PLL is designed in a 130 nm SiGe BiCMOS process. The rms jitter of the studied PLL output is about 5 ps with a 97.7 MHz reference clock with 4.9 ps rms jitter from a 0.05 to 12.5 GHz signal generator. The total power consumption of the PLL is less than 175 mW from a 2.5 V power supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; charge pump circuits; field effect MMIC; integrated circuit design; jitter; low-power electronics; phase locked loops; phase noise; SiGe; SiGe BiCMOS process; charge pump current; frequency 0.05 GHz to 12.5 GHz; loop filter resistor; loop stability; phase noise; power consumption; rms jitter; silicon photonic transmitter prototype; size 130 nm; type-II 3rd-order charge pump PLL; voltage 2.5 V; Clocks; Jitter; Phase locked loops; Phase noise; Transfer functions; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2015 IEEE Workshop on
Conference_Location :
Boise, ID
ISSN :
1947-3834
Print_ISBN :
978-1-4799-7644-7
Type :
conf
DOI :
10.1109/WMED.2015.7093690
Filename :
7093690
Link To Document :
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