• DocumentCode
    2531808
  • Title

    Design Analysis of a 12.5 GHz PLL in 130 Nm SiGe BiCMOS Process

  • Author

    Kehan Zhu ; Saxena, Vishal ; Xinyu Wu ; Balagopal, Sakkarapani

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA
  • fYear
    2015
  • fDate
    20-20 March 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A systematic design method is applied to study and analyze the loop stability and phase noise of a type-II 3rd-order charge pump PLL. The designed PLL outputs at 12.5 GHz, which is intended to provide a clock for a silicon photonic transmitter prototype. The charge pump current and loop filter resistor are made tunable to cover process and temperature variations. The PLL is designed in a 130 nm SiGe BiCMOS process. The rms jitter of the studied PLL output is about 5 ps with a 97.7 MHz reference clock with 4.9 ps rms jitter from a 0.05 to 12.5 GHz signal generator. The total power consumption of the PLL is less than 175 mW from a 2.5 V power supply.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; charge pump circuits; field effect MMIC; integrated circuit design; jitter; low-power electronics; phase locked loops; phase noise; SiGe; SiGe BiCMOS process; charge pump current; frequency 0.05 GHz to 12.5 GHz; loop filter resistor; loop stability; phase noise; power consumption; rms jitter; silicon photonic transmitter prototype; size 130 nm; type-II 3rd-order charge pump PLL; voltage 2.5 V; Clocks; Jitter; Phase locked loops; Phase noise; Transfer functions; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices (WMED), 2015 IEEE Workshop on
  • Conference_Location
    Boise, ID
  • ISSN
    1947-3834
  • Print_ISBN
    978-1-4799-7644-7
  • Type

    conf

  • DOI
    10.1109/WMED.2015.7093690
  • Filename
    7093690