Title :
STTM-promising nanoelectronic DRAM device
Author :
Baik, Seung Jae ; Huo, Zongliang ; Lim, Seung-Hyun ; Yeo, In-Seok ; Choi, Siyoung ; Chung, U-in ; Moon, Joo Tae
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Gyeonggi, South Korea
Abstract :
We have examined STTM as the alternative to DRAM in terms of scalability, operation power, and sensing signal. The characteristics of STTM are shown to strongly depend on those of vertical transistor. To obtain maximum performance, fully depleted vertical transistor is essential. Moreover, it is shown that scaling below 50 nm could exhibit long enough retention time for nonvolatile random access memory application.
Keywords :
DRAM chips; nanoelectronics; nanoelectronic DRAM device; nonvolatile random access memory application; operation power; retention time; scalability; scalable two transistor memory; sensing signal; vertical transistor; Capacitance; Leakage current; MIM capacitors; Moon; Nanoscale devices; Nonvolatile memory; Random access memory; Research and development; Scalability; Threshold voltage;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392244
