Fabrication of single-electron transistors based on proximity effects of electron-beam lithography

Author

Hu, Shu-Fen ; Fang, Yi-Pin ; Chou, Ya-Chang ; Hwang, Gwo-Jen

Author_Institution

Nat. Nano Device Lab., Hsinchu, Taiwan

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

47

Lastpage

49

Abstract

A simple method, based on the proximity effects of electron-beam lithography, which caused by overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot.

Keywords

electron beam lithography; elemental semiconductors; nanolithography; nanostructured materials; oxidation; proximity effect (lithography); semiconductor quantum dots; silicon; single electron transistors; sputter etching; Si; Si based nanodots; dosage distribution; dry etching; electron transport; electron-beam lithography; gated quantum dot; nanostructure materials; narrow tunnel junctions; overlapping region; proximity effects; single-electron transistors; thermal oxidation process; Electrodes; Electron beams; Etching; Fabrication; Lithography; Proximity effect; Quantum dots; Resists; Semiconductor films; Single electron transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392245

Filename

1392245