• DocumentCode
    2531923
  • Title

    Triple high κ stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS type flash memory device applications

  • Author

    Jeon, Sanghun ; Choi, Sangmoo ; Park, Yoondong ; Hwang, Hyunsang ; Han, Jung Hee ; Chae, Hisun ; Chae, Soo Doo ; Kim, Ju Hyung ; Kim, Moon Kyung ; Jeong, Youn Seok ; Yoondong Park ; Seo, Sunare ; Lee, Jo Won ; Kim, Chung Woo

  • Author_Institution
    M.D. Lab., Samsung Adv. Inst. of Technol., Kyungki, South Korea
  • fYear
    2004
  • fDate
    16-19 Aug. 2004
  • Firstpage
    53
  • Lastpage
    55
  • Abstract
    In this article, we report on electrical and memory properties of triple high-κ stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS type flash memory device applications. For 3 nm-thick Al2O3/10 nm-thick HfO2/10 nm-thick Al2O3 (AHA) stack, memory window (M.W.) of 1.4 V at programming/erasing (P/E) condition of ±6 V/1-2 msec was obtained. In addition, high pressure D2 annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time.
  • Keywords
    alumina; annealing; flash memories; hafnium compounds; permittivity; 1.4 V; 10 atm; 10 nm; 3 nm; Al2O3-HfO2-Al2O3; flash memory device applications; high pressure D2 annealing; high pressure H2 annealing; memory window; programming-erasing condition; retention time; slope per decade; triple high-κ stacks; Annealing; Artificial intelligence; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; Materials science and technology; SONOS devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2004. 4th IEEE Conference on
  • Print_ISBN
    0-7803-8536-5
  • Type

    conf

  • DOI
    10.1109/NANO.2004.1392247
  • Filename
    1392247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2531923