• DocumentCode
    2531984
  • Title

    Characterization of thin films based on TiO2 by XRD, AFM and XPS measurements

  • Author

    Wojcieszak, D. ; Domaradzki, J. ; Kaczmarek, D. ; Michalec, B.

  • Author_Institution
    Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
  • fYear
    2008
  • fDate
    20-22 June 2008
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    In this paper nanocrystalline thin films of TiO2 doped with Tb have been investigated. Thin films were deposited on different (silicon and glass) substrates using modified magnetron sputtering method named High Energy. Structural properties were examined by X-Ray Diffraction (XRD) method. The results have shown, that phase and average crystallites size of prepared thin films were determined by the process parameters and the amount of Tb-dopant. Atomic Force Microscopy results confirmed XRD results and shown that examined thin films were nanocrystalline. Investigations performed by X-Ray Photoelectron Spectroscopy (XPS) method have shown that stoichiometric TiO2- matrix was obtained. The results also have revealed diversification of OH- absorption on sample surface depending on the structure and composition of the thin films.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; nanostructured materials; sputter deposition; stoichiometry; terbium; thin films; titanium compounds; AFM; TiO2:Tb; XPS; XRD; absorption; crystallites size; diversification; glass substrate; magnetron sputtering method; nanocrystalline thin film; silicon substrate; stoichiometric; structural property; Atomic force microscopy; Atomic layer deposition; Crystallization; Glass; Semiconductor thin films; Silicon; Sputtering; Transistors; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Microsystems, 2008 International Students and Young Scientists Workshop -
  • Conference_Location
    Wroclaw
  • Print_ISBN
    978-1-4244-4971-2
  • Electronic_ISBN
    978-1-4244-2555-6
  • Type

    conf

  • DOI
    10.1109/STYSW.2008.5164154
  • Filename
    5164154