Title :
Quantum confinement observed in ultrafine ZnO and ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures
Author :
Park, Won Il ; An, Sung Jin ; Yi, Gyu-Chul ; Kim, Miyoung
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., South Korea
Abstract :
We report on the fabrication and photoluminescent (PL) properties of ultrafine ZnO nanorods and ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures. Employing catalyst-free metalorganic vapor-phase epitaxy, ultrafine ZnO nanorods with very thin diameters below 10 nm were prepared and subsequently coaxial nanorod heterostructures were fabricated by epitaxial growth of Zn0.8Mg0.2O layers on the whole surfaces of the ZnO nanorods. From PL spectra of ultrafine ZnO nanorods, a systematic blue-shift in their PL peak position with decreasing their diameter was observed, which is mainly due to the quantum confinement effect along the radial direction in ZnO nanorods. Furthermore, the ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures exhibited significantly increased PL intensity.
Keywords :
II-VI semiconductors; MOCVD; magnesium compounds; nanostructured materials; nanotechnology; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; spectral line shift; vapour phase epitaxial growth; zinc compounds; PL intensity; PL peak; PL spectra; ZnO; ZnO-Zn0.8Mg0.2O; blue shift; catalyst free metalorganic vapor phase epitaxy; epitaxial growth; photoluminescent properties; quantum confinement effect; ultrafine ZnO nanorods; ultrafine ZnO-Zn0.8Mg0.2O coaxial nanorod heterostructures; Charge carrier processes; Coaxial components; Effective mass; Epitaxial growth; Materials science and technology; Nanostructures; Optical device fabrication; Photoluminescence; Potential well; Zinc oxide;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392257
