• DocumentCode
    2532124
  • Title

    Quantum confinement observed in ultrafine ZnO and ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures

  • Author

    Park, Won Il ; An, Sung Jin ; Yi, Gyu-Chul ; Kim, Miyoung

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., South Korea
  • fYear
    2004
  • fDate
    16-19 Aug. 2004
  • Firstpage
    83
  • Lastpage
    85
  • Abstract
    We report on the fabrication and photoluminescent (PL) properties of ultrafine ZnO nanorods and ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures. Employing catalyst-free metalorganic vapor-phase epitaxy, ultrafine ZnO nanorods with very thin diameters below 10 nm were prepared and subsequently coaxial nanorod heterostructures were fabricated by epitaxial growth of Zn0.8Mg0.2O layers on the whole surfaces of the ZnO nanorods. From PL spectra of ultrafine ZnO nanorods, a systematic blue-shift in their PL peak position with decreasing their diameter was observed, which is mainly due to the quantum confinement effect along the radial direction in ZnO nanorods. Furthermore, the ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures exhibited significantly increased PL intensity.
  • Keywords
    II-VI semiconductors; MOCVD; magnesium compounds; nanostructured materials; nanotechnology; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; spectral line shift; vapour phase epitaxial growth; zinc compounds; PL intensity; PL peak; PL spectra; ZnO; ZnO-Zn0.8Mg0.2O; blue shift; catalyst free metalorganic vapor phase epitaxy; epitaxial growth; photoluminescent properties; quantum confinement effect; ultrafine ZnO nanorods; ultrafine ZnO-Zn0.8Mg0.2O coaxial nanorod heterostructures; Charge carrier processes; Coaxial components; Effective mass; Epitaxial growth; Materials science and technology; Nanostructures; Optical device fabrication; Photoluminescence; Potential well; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2004. 4th IEEE Conference on
  • Print_ISBN
    0-7803-8536-5
  • Type

    conf

  • DOI
    10.1109/NANO.2004.1392257
  • Filename
    1392257