InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

Author

Binetti, P.R.A. ; Leijtens, X.J.M. ; Ripoll, A. Morant ; de Vries, T. ; Smalbrugge, E. ; Oei, Y.S. ; Di Cioccio, L. ; Fedeli, J.M. ; Lagahe, C. ; Orobtchouk, R. ; Van Thourhout, D. ; van Veldhoven, P.J. ; Nötzel, R. ; Smit, M.K.

Author_Institution

COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven, Netherlands

fYear

2009

fDate

4-8 Oct. 2009

Firstpage

139

Lastpage

140

Abstract

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si₃N₄-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper.

Keywords

CMOS integrated circuits; integrated circuit interconnections; photodetectors; waveguides; CMOS wafer; InP; Si₃N₄; integration technology; interconnect waveguides; photodetector; photonic circuit; wafer scale processing; wiring; Absorption; Indium phosphide; Integrated circuit interconnections; Optical buffering; Optical device fabrication; Optical interconnections; Optical waveguides; Photodetectors; Photonic integrated circuits; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE

Conference_Location

Belek-Antalya

ISSN

1092-8081

Print_ISBN

978-1-4244-3680-4

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2009.5343085

Filename

5343085