Title :
Effect of the crystal structure on the optical properties of InP nanowires
Author :
Paiman, S. ; Gao, Q. ; Tan, H.H. ; Jagadish, C. ; Pemasiri, K. ; Montazeri, M. ; Jackson, H.E. ; Smith, L.M. ; Yarrison-Rice, J.M. ; Zhang, X. ; Zou, J.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report the effect of V/III ratio and nanowire diameter on the crystal structure and optical properties of InP nanowires. Time -resolved photoluminescence studies have revealed that wurtzite nanowires show longer carrier lifetimes than zinc-blende ones.
Keywords :
III-V semiconductors; crystal structure; indium compounds; nanowires; photoluminescence; InP; crystal structure; nanowire diameter; optical properties; time-resolved photoluminescence; Electron optics; Gold; Indium phosphide; Nanowires; Optical microscopy; Phase locked loops; Photoluminescence; Physics; Scanning electron microscopy; Transmission electron microscopy;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343092
