DocumentCode :
2532310
Title :
Growth and properties of high areal density GaxIn1-xP quantum dots on GaP substrate
Author :
Gerhard, S. ; Baumann, V. ; Höfling, S. ; Forchel, A.
Author_Institution :
Wilhelm Conrad Rontgen Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg, Germany
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
149
Lastpage :
150
Abstract :
We present high areal density GaxIn1-xP quantum dots grown on GaP substrate by molecular beam epitaxy and report a detailed structural and optical analysis. The composition dependent luminescence is evaluated and linked to the morphology.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; GaInP; GaP; epitaxial growth; molecular beam epitaxy; quantum dots; Atomic force microscopy; Indium phosphide; Luminescence; Molecular beam epitaxial growth; Optical buffering; Optical materials; Photonic band gap; Quantum dots; Scanning electron microscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343094
Filename :
5343094
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2532310
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