Title :
InGaAs high speed communication photodiodes
Author :
Achouche, M. ; Glastre, G. ; Caillaud, C. ; Lahrichi, M. ; Carpentier, D.
Author_Institution :
III-V Lab., Alcatel-Thales III-V Lab., Marcoussis, France
Abstract :
This paper reviews trends in InGaAs based communication photodetectors design. In particular, new avalanche structures using Al(Ga)(In)As large bandgap material used for high sensitivity photoreceivers in access network will be described as well as highly linear uni-travelling-carrier UTC photodiodes, well suited for high bit rates using coherent detection or for analog photonic links.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; photodetectors; AlInAs-InGaAs; InP-InGaAs; access network; analog photonic links; avalanche structures; coherent detection; communication photodetectors; high speed communication photodiodes; highly linear uni-travelling-carrier photodiodes; large bandgap material; photoreceivers; Absorption; Bandwidth; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Optical receivers; Optical waveguides; Photodetectors; Photodiodes; Photonic band gap;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343096
