DocumentCode
2532343
Title
AlGaN quadruple-band photodetectors
Author
Gökkavas, Mutlu ; Butun, Serkan ; Caban, Piotr ; Strupinski, Wlodek ; Ozbay, Ekmel
Author_Institution
Dept. of Phys., Bilkent Univ., Ankara, Turkey
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
365
Lastpage
366
Abstract
Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; wide band gap semiconductors; AlGaN; quantum efficiency peaks; spectral responsivity bands; ultraviolet metal-semiconductor-metal photodetectors; Aluminum gallium nitride; Dark current; Detectors; Etching; Filters; Fingers; Fires; MOCVD; Optical device fabrication; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343098
Filename
5343098
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