Title :
Several methods to debug complex ICs manufactured by submicron process
Author_Institution :
United Microelectron. Corp., Hsin-Chu, Taiwan
Abstract :
As Integrated Circuit (IC) design becomes hugely complex and processes approach the deep submicron regime, it is becoming more difficult to debug an IC. In particular, probing a sub-half-micron conductor with a mechanical probing station is not easy. The author describes an integrated debug system (including an E-beam prober, focused ion beam technology, a mechanical probing system, reactive ion etching and mask engineering) which can solve this problem quickly
Keywords :
electron beam testing; electron probes; failure analysis; focused ion beam technology; integrated circuit reliability; integrated circuit testing; masks; sputter etching; E-beam prober; IC design; complex IC debugging; deep submicron regime; focused ion beam technology; functional failure; integrated debug system; logic state failure; mask engineering; mechanical probing station; reactive ion etching; sub-half-micron conductor; submicron process engineering; timing failure; Circuit faults; Conducting materials; Conductors; Dielectric substrates; Etching; Frequency; Logic; Manufacturing processes; Passivation; Static VAr compensators;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638221
