Several methods to debug complex ICs manufactured by submicron process

Author

Hung, Hui-Chuan

Author_Institution

United Microelectron. Corp., Hsin-Chu, Taiwan

fYear

1997

fDate

21-25 Jul 1997

Firstpage

234

Lastpage

237

Abstract

As Integrated Circuit (IC) design becomes hugely complex and processes approach the deep submicron regime, it is becoming more difficult to debug an IC. In particular, probing a sub-half-micron conductor with a mechanical probing station is not easy. The author describes an integrated debug system (including an E-beam prober, focused ion beam technology, a mechanical probing system, reactive ion etching and mask engineering) which can solve this problem quickly

Keywords

electron beam testing; electron probes; failure analysis; focused ion beam technology; integrated circuit reliability; integrated circuit testing; masks; sputter etching; E-beam prober; IC design; complex IC debugging; deep submicron regime; focused ion beam technology; functional failure; integrated debug system; logic state failure; mask engineering; mechanical probing station; reactive ion etching; sub-half-micron conductor; submicron process engineering; timing failure; Circuit faults; Conducting materials; Conductors; Dielectric substrates; Etching; Frequency; Logic; Manufacturing processes; Passivation; Static VAr compensators;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638221

Filename

638221