Impacts of modified characteristics on 0.1 mu m MOSFET speed based on energy transport and parasitic effects

Speed-limiting factors in 0.1- mu m MOSFETs are examined through detailed analyses combining two dominant factors in miniaturized MOSFETs. One is the drivability increase due to the energy transport effect, such as velocity overshoot. The other is the drivability degradation due to substantial parasitic resistances and mobility degradation. Various analyses from the process to switching speed incorporating energy transport and parasitic resistance were carried out. It is shown that unbalanced contributions of the pentode and triode regions limit the 0.1- mu m MOSFET switching speed. Since the triode region operation begins to dominate the propagation delay time with miniaturization, it is important to reduce the degradation of triode region drivability.<>