Growth of ZnSe nanowires by molecular beam epitaxy

Author

Colli, A. ; Martell, F. ; Rubini, Stephane ; Ducati, C. ; Hofmann, S. ; Ferrari, A.C. ; Robertson, J. ; Franciosi, A.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

177

Lastpage

179

Abstract

We have grown ZnSe nanowires on Au-coated SiO₂ by molecular beam epitaxy. Data are reported for structures grown at 450 and 550°C. High resolution electron microscopy shows that the lower growth temperature gives rise to a higher density of high-quality nanostructures and that nanowires, nanobelts and nanosaws are all present in our samples. ZnSe nanostructures do not grow on the non-coated substrate. Photoluminescence shows a blue component in samples grown at lower temperature.

Keywords

II-VI semiconductors; molecular beam epitaxial growth; nanotechnology; nanowires; photoluminescence; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; zinc compounds; 450 degC; 550 degC; Au-SiO₂; Au-coated SiO₂ substrate; ZnSe; ZnSe nanostructures; ZnSe nanowires; density; high resolution electron microscopy; molecular beam epitaxy; nanobelts; nanosaws; photoluminescence; Electrons; Gold; Molecular beam epitaxial growth; Nanostructures; Nanowires; Optical microscopy; Photoluminescence; Plasma temperature; Substrates; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392288

Filename

1392288