Si/SiGe heterojunction bipolar transistors with current gains up to 5000

Author

Schreiber, H. ; Bosch, B.G.

Author_Institution

Mikroelektronik-Zentrum, Ruhr-Univ. Bochum, West Germany

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

643

Lastpage

646

Abstract

Si-SiGe heterojunction bipolar transistors were fabricated in a process including 900 degrees C processing. The current gain beta reaches 5000 for 30- mu m-wide emitters. Surface recombination reduces beta in narrow-emitter transistors. Recombination centers, essentially in the base layer, affect beta and may degrade the DC output characteristics. The transit frequency was measured to be 12 GHz at V/sub CE/=3 V.<>

Keywords

Ge-Si alloys; electron-hole recombination; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; solid-state microwave devices; 12 GHz; 30 micron; 900 degC; DC output characteristics; Si-SiGe; current gain; heterojunction bipolar transistors; microwave devices; narrow-emitter transistors; recombination centres; surface-recombination; transit frequency; Bipolar transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor device doping; Silicon germanium; Sputter etching; Temperature; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74362

Filename

74362