Title :
High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
Author :
Kamins, T.I. ; Nauka, K. ; Camnitz, L.H. ; Kruger, J.B. ; Turner, J.E. ; Rosner, S.J. ; Scott, M.P. ; Hoyt, J.L. ; King, C.A. ; Noble, D.B. ; Gibbons, J.F.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Small-geometry, high-performance Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors have been fabricated using chemical vapor deposition to form the epitaxial device layers and direct-write, electron-beam lithography. The measured value of f/sub T/ is approximately 29 GHz. Base-collector capacitance is one of the dominant limiting parasitic parameters in the mesa structure used to demonstrate high-speed performance. Advanced epitaxial techniques, such as selective deposition of Si/sub 1-x/Ge/sub x/, should reduce this parasitic element significantly, markedly increasing device speed. Selective deposition of Si/sub 1-x/Ge/sub x/ has been demonstrated.<>
Keywords :
Ge-Si alloys; elemental semiconductors; frequency response; heterojunction bipolar transistors; semiconductor materials; silicon; solid-state microwave devices; vapour phase epitaxial growth; 29 GHz; CVD; HF HBT; SHF; Si-Si/sub 1-x/Ge/sub x/; VPE; base-collector capacitance; chemical vapor deposition; direct-write; electron-beam lithography; epitaxial device layers; heterojunction bipolar transistors; high-speed performance; limiting parasitic parameters; mesa structure; microwave operation; selective deposition; Bipolar transistors; Chemical vapor deposition; Cutoff frequency; Frequency response; Heterojunction bipolar transistors; Laboratories; Lithography; Silicon; Substrates; Testing;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74363
