Modelling quantum dots in conventional and annular III-V micro-pillar micro-cavities for single-photon sources

Author

Ho, Y.-L.D. ; Cryan, M.J. ; Craddock, I.J. ; Railton, C.J. ; Rarity, J.G.

Author_Institution

Dept. of Electr. & Electron. Eng., Bristol Univ., UK

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

204

Lastpage

206

Abstract

We analyze micro-pillar micro-cavities of III-V semiconductor materials and propose a new type of micro-pillar micro-cavity based on an annular geometry using 3-D finite-difference time-domain (FDTD) method. A dipole source in the cavity region models a single quantum-dot source. We find strong modifications to the dipole emission due to the small modal volume and high Q-factor. We then discuss application to the development of efficient single-photon sources for use in quantum information processing.

Keywords

III-V semiconductors; Q-factor; aluminium compounds; finite difference time-domain analysis; gallium arsenide; microcavities; photonic band gap; semiconductor quantum dots; spontaneous emission; 3D finite-difference time-domain method; AlAs-GaAs; FDTD method; III-V semiconductor materials; annular III-V micropillar microcavities; annular geometry; dipole emission; dipole source; high Q-factor; quantum dots; quantum information processing; single-photon sources; Finite difference methods; III-V semiconductor materials; Optical pulses; Optical waveguides; Probes; Quantum dot lasers; Quantum dots; Resonance; Time domain analysis; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392298

Filename

1392298